High-mobility ultrathin semiconducting films prepared by spin coating

David B. Mitzi (), Laura L. Kosbar, Conal E. Murray, Matthew Copel and Ali Afzali
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David B. Mitzi: IBM T. J. Watson Research Center
Laura L. Kosbar: IBM T. J. Watson Research Center
Conal E. Murray: IBM T. J. Watson Research Center
Matthew Copel: IBM T. J. Watson Research Center
Ali Afzali: IBM T. J. Watson Research Center

Nature, 2004, vol. 428, issue 6980, 299-303

Abstract: Abstract The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics1,2,3. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication4,5,6,7,8,9,10,11. Here we demonstrate a technique for spin coating ultrathin (∼50 Å), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS2-xSex films, which exhibit n-type transport, large current densities (>105 A cm-2) and mobilities greater than 10 cm2 V-1 s-1—an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells12, thermoelectrics13 and memory devices14).

Date: 2004
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DOI: 10.1038/nature02389

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