Ultrahigh-quality silicon carbide single crystals

Daisuke Nakamura, Itaru Gunjishima, Satoshi Yamaguchi, Tadashi Ito, Atsuto Okamoto, Hiroyuki Kondo, Shoichi Onda and Kazumasa Takatori ()
Additional contact information
Daisuke Nakamura: Toyota Central R&D Laboratories, Inc.
Itaru Gunjishima: Toyota Central R&D Laboratories, Inc.
Satoshi Yamaguchi: Toyota Central R&D Laboratories, Inc.
Tadashi Ito: Toyota Central R&D Laboratories, Inc.
Atsuto Okamoto: Toyota Central R&D Laboratories, Inc.
Hiroyuki Kondo: Research Laboratories, DENSO Corporation, 500-1
Shoichi Onda: Research Laboratories, DENSO Corporation, 500-1
Kazumasa Takatori: Toyota Central R&D Laboratories, Inc.

Nature, 2004, vol. 430, issue 7003, 1009-1012

Abstract: Abstract Silicon carbide (SiC) has a range of useful physical, mechanical and electronic properties that make it a promising material for next-generation electronic devices1,2. Careful consideration of the thermal conditions3,4,5,6 in which SiC {0001} is grown has resulted in improvements in crystal diameter and quality: the quantity of macroscopic defects such as hollow core dislocations (micropipes)7,8,9, inclusions, small-angle boundaries and long-range lattice warp has been reduced10,11. But some macroscopic defects (about 1–10 cm-2) and a large density of elementary dislocations (∼ 104 cm-2), such as edge, basal plane and screw dislocations, remain within the crystal, and have so far prevented the realization of high-efficiency, reliable electronic devices in SiC (refs 12–16). Here we report a method, inspired by the dislocation structure of SiC grown perpendicular to the c-axis (a-face growth)17, to reduce the number of dislocations in SiC single crystals by two to three orders of magnitude, rendering them virtually dislocation-free. These substrates will promote the development of high-power SiC devices and reduce energy losses of the resulting electrical systems.

Date: 2004
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DOI: 10.1038/nature02810

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