Doping semiconductor nanocrystals
Steven C. Erwin (),
Lijun Zu,
Michael I. Haftel,
Alexander L. Efros,
Thomas A. Kennedy and
David J. Norris ()
Additional contact information
Steven C. Erwin: Naval Research Laboratory
Lijun Zu: University of Minnesota
Michael I. Haftel: Naval Research Laboratory
Alexander L. Efros: Naval Research Laboratory
Thomas A. Kennedy: Naval Research Laboratory
David J. Norris: University of Minnesota
Nature, 2005, vol. 436, issue 7047, 91-94
Abstract:
Doping the undopable The properties of bulk semiconductors can be modified by doping, the intentional incorporation of impurities. The same method applied to semiconductor nanocrystals has had only limited success. Now a microscopic explanation of how dopants are incorporated into growing semiconductor nanocrystals provides pointers as to how these problems might be overcome. Doping efficiency depends on the initial adsorption of impurities on the surface of the crystal, and by close attention to growth conditions, namely surface morphology, crystal shape and surfactants, ‘undopable’ nanocrystals such as CdSe may soon become ‘dopable’ for use in applications such as solar cells and spintronics.
Date: 2005
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Persistent link: https://EconPapers.repec.org/RePEc:nat:nature:v:436:y:2005:i:7047:d:10.1038_nature03832
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DOI: 10.1038/nature03832
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