Enhancing semiconductor device performance using ordered dopant arrays

Takahiro Shinada (), Shintaro Okamoto, Takahiro Kobayashi and Iwao Ohdomari
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Takahiro Shinada: Consolidated Research Institute for Advanced Science and Medical Care (ASMeW)
Shintaro Okamoto: Waseda University
Takahiro Kobayashi: Waseda University
Iwao Ohdomari: Consolidated Research Institute for Advanced Science and Medical Care (ASMeW)

Nature, 2005, vol. 437, issue 7062, 1128-1131

Abstract: Impure thoughts For semiconductors to work properly, it is necessary to improve their electrical properties by adding small amounts of impurities, such as boron, to the semiconducting material, a process called doping. Until now it has been sufficient to introduce dopant atoms randomly. But as semiconductor devices continue to shrink, they will soon reach a size where fluctuations in dopant atom numbers will begin to influence electrical characteristics: dopant distribution can no longer be assumed to be homogeneous if the distance randomly separating these atoms is on a similar scale to the device itself. Shinada et al. have investigated the role of dopant disorder, using a recently developed single-ion implantation technique to implant dopant ions one-by-one into a fine semiconductor region. The results highlight the improvements in device performance that should be achievable through atomic-scale control of the doping process, and may even enhance the prospects for realizing silicon-based solid-state quantum computers.

Date: 2005
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DOI: 10.1038/nature04086

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