Strong quantum-confined Stark effect in germanium quantum-well structures on silicon

Yu-Hsuan Kuo (), Yong Kyu Lee, Yangsi Ge, Shen Ren, Jonathan E. Roth, Theodore I. Kamins, David A. B. Miller and James S. Harris
Additional contact information
Yu-Hsuan Kuo: Stanford University
Yong Kyu Lee: Stanford University
Yangsi Ge: Stanford University
Shen Ren: Stanford University
Jonathan E. Roth: Stanford University
Theodore I. Kamins: Stanford University
David A. B. Miller: Stanford University
James S. Harris: Stanford University

Nature, 2005, vol. 437, issue 7063, 1334-1336

Abstract: A light at the end of the chip Silicon chips dominate electronics while optical fibres dominate long-distance information transfer. Recent work, in search of the best of both worlds, has led to silicon devices capable of modulating light; these show promise but still rely on weak physical mechanisms found in silicon itself. Now a team working at Stanford University and at Hewlett-Packard's Palo Alto labs has developed thin germanium ‘quantum well’ nanostructures grown on silicon that generate a strong quantum-mechanical effect capable of turning light beams on and off. Their performance rivals the best seen in any material. This development may allow silicon/germanium chips to handle both electronics and optics, uniting computing and communications at the integrated chip level.

Date: 2005
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DOI: 10.1038/nature04204

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