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John J. Boland ()
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John J. Boland: the Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and the School of Chemistry
Nature, 2006, vol. 439, issue 7077, 671-673
Abstract:
Conventionally, conduction in silicon is enhanced by doping — adding impurities that change the material's electronic structure. But exploiting surface effects in thin silicon films may offer yet other opportunities.
Date: 2006
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DOI: 10.1038/439671a
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