Strained silicon as a new electro-optic material
Rune S. Jacobsen (),
Karin N. Andersen,
Peter I. Borel,
Jacob Fage-Pedersen,
Lars H. Frandsen,
Ole Hansen,
Martin Kristensen,
Andrei V. Lavrinenko,
Gaid Moulin,
Haiyan Ou,
Christophe Peucheret,
Beáta Zsigri and
Anders Bjarklev
Additional contact information
Rune S. Jacobsen: Nano·DTU, Technical University of Denmark
Karin N. Andersen: Nano·DTU, Technical University of Denmark
Peter I. Borel: Nano·DTU, Technical University of Denmark
Jacob Fage-Pedersen: Nano·DTU, Technical University of Denmark
Lars H. Frandsen: Nano·DTU, Technical University of Denmark
Ole Hansen: Nano·DTU, Technical University of Denmark
Martin Kristensen: Nano·DTU, Technical University of Denmark
Andrei V. Lavrinenko: Nano·DTU, Technical University of Denmark
Gaid Moulin: Nano·DTU, Technical University of Denmark
Haiyan Ou: Nano·DTU, Technical University of Denmark
Christophe Peucheret: Nano·DTU, Technical University of Denmark
Beáta Zsigri: Nano·DTU, Technical University of Denmark
Anders Bjarklev: Nano·DTU, Technical University of Denmark
Nature, 2006, vol. 441, issue 7090, 199-202
Abstract:
Straining at the leash Silicon is by far the best material available for making electronic components, and much effort has been expended on persuading this reluctant light carrier to carry light. If achieved, this would be a major boost to photonics and optoelectronics. Now a group working at Nano·DTU and other Danish research centres has discovered that a significant electro-optical effect can be induced in silicon by breaking the crystal symmetry. The symmetry is broken by depositing a straining layer on top of a silicon waveguide. If strained silicon is the answer to the ‘silicon problem’, it could potentially remove the bottleneck in modern computers by rplacing electronic components with much faster optical alternatives.
Date: 2006
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DOI: 10.1038/nature04706
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