Ge/Si nanowire heterostructures as high-performance field-effect transistors

Jie Xiang, Wei Lu, Yongjie Hu, Yue Wu, Hao Yan and Charles M. Lieber ()
Additional contact information
Jie Xiang: Department of Chemistry and Chemical Biology
Wei Lu: Department of Chemistry and Chemical Biology
Yongjie Hu: Department of Chemistry and Chemical Biology
Yue Wu: Department of Chemistry and Chemical Biology
Hao Yan: Department of Chemistry and Chemical Biology
Charles M. Lieber: Department of Chemistry and Chemical Biology

Nature, 2006, vol. 441, issue 7092, 489-493

Abstract: Outperforming silicon Field-effect transistors (FETs) based on semi-conductor nanowires could one day replace standard silicon MOSFETs in miniature electronic circuits. MOSFETs, or metal-oxide semiconductor field-effect transistors, are a type of transistor used for high-speed switching and in a computer's integrated circuits. A specially designed nanowire with a germanium shell and silicon core has shown promise as a nanometre-scale field-effect transistor: it has a near-perfect channel for electronic conduction. Now, in transistor configuration, this germanium/silicon nanowire is shown to have properties including high conductance and short switching time delay that are better than state-of-the-art silicon MOSFETs.

Date: 2006
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DOI: 10.1038/nature04796

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