Atom-by-atom substitution of Mn in GaAs and visualization of their hole-mediated interactions

Dale Kitchen, Anthony Richardella, Jian-Ming Tang, Michael E. Flatté and Ali Yazdani ()
Additional contact information
Dale Kitchen: Princeton University
Anthony Richardella: Princeton University
Jian-Ming Tang: University of Iowa
Michael E. Flatté: University of Iowa
Ali Yazdani: Princeton University

Nature, 2006, vol. 442, issue 7101, 436-439

Abstract: Spintronics at the atomic level The addition of metals as 'dopants to semiconductors is used to adjust the electronic properties of transistors and diodes. A new study uses atomically precise substitution of individual dopants to measure their interactions on the nanometre scale. The discovery of ferromagnetism in manganese-doped gallium arsenide sparked interest in semiconductors based on electron spin, or spintronics. This study uses scanning tunnelling microscopy to visualize the GaAs electronic states involved in Mn–Mn interactions. A strong dependence of ferromagnetic interaction on crystal orientation is seen, a property that might be exploited by growing oriented structures with ferromagnetic transition temperatures beyond those of randomly doped samples. This could also lead to coupled quantum bits for memory or information processing. Cover graphic: Mn hole states visualized on a GaAs surface mediate magnetic interactions between spin states.

Date: 2006
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DOI: 10.1038/nature04971

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