A 160-kilobit molecular electronic memory patterned at 1011 bits per square centimetre

Jonathan E. Green, Jang Wook Choi, Akram Boukai, Yuri Bunimovich, Ezekiel Johnston-Halperin, Erica DeIonno, Yi Luo, Bonnie A. Sheriff, Ke Xu, Young Shik Shin, Hsian-Rong Tseng, J. Fraser Stoddart and James R. Heath ()
Additional contact information
Jonathan E. Green: Division of Chemistry and Chemical Engineering and the Kavli Nanoscience Institute, Caltech
Jang Wook Choi: Division of Chemistry and Chemical Engineering and the Kavli Nanoscience Institute, Caltech
Akram Boukai: Division of Chemistry and Chemical Engineering and the Kavli Nanoscience Institute, Caltech
Yuri Bunimovich: Division of Chemistry and Chemical Engineering and the Kavli Nanoscience Institute, Caltech
Ezekiel Johnston-Halperin: Division of Chemistry and Chemical Engineering and the Kavli Nanoscience Institute, Caltech
Erica DeIonno: Division of Chemistry and Chemical Engineering and the Kavli Nanoscience Institute, Caltech
Yi Luo: Division of Chemistry and Chemical Engineering and the Kavli Nanoscience Institute, Caltech
Bonnie A. Sheriff: Division of Chemistry and Chemical Engineering and the Kavli Nanoscience Institute, Caltech
Ke Xu: Division of Chemistry and Chemical Engineering and the Kavli Nanoscience Institute, Caltech
Young Shik Shin: Division of Chemistry and Chemical Engineering and the Kavli Nanoscience Institute, Caltech
Hsian-Rong Tseng: University of California at Los Angeles
J. Fraser Stoddart: University of California at Los Angeles
James R. Heath: Division of Chemistry and Chemical Engineering and the Kavli Nanoscience Institute, Caltech

Nature, 2007, vol. 445, issue 7126, 414-417

Abstract: Molecular memory The miniaturization of integrated circuits could stall in 20 years or so, when current technologies will scale down no further. Miniaturization beyond that point might be possible with DRAMs (dynamic random access memories, a concept derived from molecular electronics), the use of nanowires, and defect-tolerant architectures. Small, error-tolerant memory circuits combining these features have already been demonstrated, but this approach moves to another level with the development of a 160,000-bit molecular electronic memory, roughly analogous to a projected 'year 2020' DRAM circuit. The circuit still has large numbers of non-working memory bits, but they are readily identified and isolated; the working bits can then be configured as a fully functional random access memory. In a News Feature, Philip Ball looks at the computer architectures needed to exploit hyper-dense molecular memories.

Date: 2007
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DOI: 10.1038/nature05462

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