Annealing-induced interfacial toughening using a molecular nanolayer

Darshan D. Gandhi, Michael Lane, Yu Zhou, Amit P. Singh, Saroj Nayak, Ulrike Tisch, Moshe Eizenberg and Ganapathiraman Ramanath ()
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Darshan D. Gandhi: Materials Science & Engineering Department,
Michael Lane: IBM Microelectronics, T.J. Watson Research Center, Yorktown Heights, New York 10598, USA
Yu Zhou: Rensselaer Polytechnic Institute, Troy, New York 12180, USA
Amit P. Singh: Materials Science & Engineering Department,
Saroj Nayak: Rensselaer Polytechnic Institute, Troy, New York 12180, USA
Ulrike Tisch: Technion-Israel Institute of Technology, Haifa 32000, Israel
Moshe Eizenberg: Technion-Israel Institute of Technology, Haifa 32000, Israel
Ganapathiraman Ramanath: Materials Science & Engineering Department,

Nature, 2007, vol. 447, issue 7142, 299-302

Abstract: High temperature processing and applications of self-assembled layers of short molecules on and between surfaces were thought to be limited owing to desorption and/or degradation of the molecules. Here Gandhi and colleagues demonstrate high levels of adhesion at an interface between copper and silica, through the high temperature processing of a self-assembled molecular nanolayer at the interface beyond the molecular desorption temperature: strengthening this particular interface is of practical importance in microelectronics, but the study also demonstrates the potential of high temperature processing and applications of such nanolayers at interfaces more generally.

Date: 2007
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DOI: 10.1038/nature05826

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