Nucleation and growth mechanism of ferroelectric domain-wall motion

Young-Han Shin, Ilya Grinberg, I-Wei Chen and Andrew M. Rappe ()
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Young-Han Shin: The Makineni Theoretical Laboratories, University of Pennsylvania, Philadelphia, Pennsylvania 19104–6323, USA
Ilya Grinberg: The Makineni Theoretical Laboratories, University of Pennsylvania, Philadelphia, Pennsylvania 19104–6323, USA
I-Wei Chen: University of Pennsylvania, Philadelphia, Pennsylvania 19104–6272, USA
Andrew M. Rappe: The Makineni Theoretical Laboratories, University of Pennsylvania, Philadelphia, Pennsylvania 19104–6323, USA

Nature, 2007, vol. 449, issue 7164, 881-884

Abstract: The polarization of a ferroelectric material by an electric field can be used as the basis of a memory device. Recording a piece of information in this way involves increasing the size of a region with one polarity at the expense of those having the opposite polarity, and hence the movement of the domain walls separating these regions. This paper reports multi-scale simulations that reproduce the domain growth rates observed experimentally, and suggest a nucleation process that is energetically realistic.

Date: 2007
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DOI: 10.1038/nature06165

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