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Improper ferroelectricity in perovskite oxide artificial superlattices

Eric Bousquet, Matthew Dawber (), Nicolas Stucki, Céline Lichtensteiger, Patrick Hermet, Stefano Gariglio, Jean-Marc Triscone and Philippe Ghosez ()
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Eric Bousquet: Physique Théorique des Matériaux, Université de Liège, Allée du 6 Août 17 (B5), 4000 Sart Tilman, Belgium
Matthew Dawber: DPMC, University of Geneva, 24 Quai E.-Ansermet 1211, Geneva 4, Switzerland
Nicolas Stucki: DPMC, University of Geneva, 24 Quai E.-Ansermet 1211, Geneva 4, Switzerland
Céline Lichtensteiger: DPMC, University of Geneva, 24 Quai E.-Ansermet 1211, Geneva 4, Switzerland
Patrick Hermet: Physique Théorique des Matériaux, Université de Liège, Allée du 6 Août 17 (B5), 4000 Sart Tilman, Belgium
Stefano Gariglio: DPMC, University of Geneva, 24 Quai E.-Ansermet 1211, Geneva 4, Switzerland
Jean-Marc Triscone: DPMC, University of Geneva, 24 Quai E.-Ansermet 1211, Geneva 4, Switzerland
Philippe Ghosez: Physique Théorique des Matériaux, Université de Liège, Allée du 6 Août 17 (B5), 4000 Sart Tilman, Belgium

Nature, 2008, vol. 452, issue 7188, 732-736

Abstract: 'Improper' ferroelectricity In the field of 'oxide electronics', artificially layered structures based on thin films of complex oxides are designed to obtain novel, technologically interesting electric or magnetic properties. Bousquet et al. studied artificial superlattices made from ferroelectric (PbTiO3) and paraelectric (SrTiO3) oxides. They have found a previously unknown type of atom rearrangement at the interfaces between thin films of these materials, leading to an unusual 'improper' ferroelectric effect. The system has a very large dielectric constant that, unlike conventional ferroelectricity, is fairly temperature independent. This is of considerable technological interest as a route to improved materials for high-permittivity dielectric layers in traditional microelectronics as well as for emerging needs in magneto-electric applications.

Date: 2008
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DOI: 10.1038/nature06817

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