Nanoscale holographic interferometry for strain measurements in electronic devices

Martin Hÿtch (), Florent Houdellier, Florian Hüe and Etienne Snoeck
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Martin Hÿtch: CEMES-CNRS, nMat Group, 29 rue Jeanne Marvig, 31055 Toulouse, France
Florent Houdellier: CEMES-CNRS, nMat Group, 29 rue Jeanne Marvig, 31055 Toulouse, France
Florian Hüe: CEMES-CNRS, nMat Group, 29 rue Jeanne Marvig, 31055 Toulouse, France
Etienne Snoeck: CEMES-CNRS, nMat Group, 29 rue Jeanne Marvig, 31055 Toulouse, France

Nature, 2008, vol. 453, issue 7198, 1086-1089

Abstract: Silicon electronics: Nanoscale strain measurement Placing silicon under strain can enhance the movement of charge carriers through the semiconductor, so little wonder that strain is now engineered into the latest high-performance silicon devices. What has been lacking, however, is a versatile tool for measuring (and hence understanding) the complex strain distributions produced in such devices. A group working at the Center for Material Elaboration and Structural Studies in Toulouse has developed a new approach that incorporates two well known techniques — moiré interferometry and electron holography — to measure strain at the nanoscale. The new method achieves high spatial resolution and precision with a large field of view, overcoming most of the limitations of existing methods.

Date: 2008
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DOI: 10.1038/nature07049

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