A high-mobility electron-transporting polymer for printed transistors

He Yan, Zhihua Chen, Yan Zheng, Christopher Newman, Jordan R. Quinn, Florian Dötz, Marcel Kastler and Antonio Facchetti ()
Additional contact information
He Yan: Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois 60077, USA
Zhihua Chen: Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois 60077, USA
Yan Zheng: Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois 60077, USA
Christopher Newman: Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois 60077, USA
Jordan R. Quinn: Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois 60077, USA
Florian Dötz: BASF Global Research Center Singapore, Science Park Road 61, Singapore 112575
Marcel Kastler: BASF SE, GKS/E-B001, 67056 Ludwigshafen, Germany
Antonio Facchetti: Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois 60077, USA

Nature, 2009, vol. 457, issue 7230, 679-686

Abstract: Abstract Printed electronics is a revolutionary technology aimed at unconventional electronic device manufacture on plastic foils, and will probably rely on polymeric semiconductors for organic thin-film transistor (OTFT) fabrication. In addition to having excellent charge-transport characteristics in ambient conditions, such materials must meet other key requirements, such as chemical stability, large solubility in common solvents, and inexpensive solution and/or low-temperature processing. Furthermore, compatibility of both p-channel (hole-transporting) and n-channel (electron-transporting) semiconductors with a single combination of gate dielectric and contact materials is highly desirable to enable powerful complementary circuit technologies, where p- and n-channel OTFTs operate in concert. Polymeric complementary circuits operating in ambient conditions are currently difficult to realize: although excellent p-channel polymers are widely available, the achievement of high-performance n-channel polymers is more challenging. Here we report a highly soluble (∼60 g l-1) and printable n-channel polymer exhibiting unprecedented OTFT characteristics (electron mobilities up to ∼0.45–0.85 cm2 V-1 s-1) under ambient conditions in combination with Au contacts and various polymeric dielectrics. Several top-gate OTFTs on plastic substrates were fabricated with the semiconductor-dielectric layers deposited by spin-coating as well as by gravure, flexographic and inkjet printing, demonstrating great processing versatility. Finally, all-printed polymeric complementary inverters (with gain 25–65) have been demonstrated.

Date: 2009
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DOI: 10.1038/nature07727

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