Electrical creation of spin polarization in silicon at room temperature

Saroj P. Dash, Sandeep Sharma, Ram S. Patel, Michel P. de Jong and Ron Jansen ()
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Saroj P. Dash: MESA+ Institute for Nanotechnology, University of Twente
Sandeep Sharma: MESA+ Institute for Nanotechnology, University of Twente
Ram S. Patel: MESA+ Institute for Nanotechnology, University of Twente
Michel P. de Jong: MESA+ Institute for Nanotechnology, University of Twente
Ron Jansen: MESA+ Institute for Nanotechnology, University of Twente

Nature, 2009, vol. 462, issue 7272, 491-494

Abstract: Silicon-based spintronics In spintronics, the electron spin degree of freedom replaces the electron charge, the basic unit of conventional electronics, as the information carrier in future spin-based electronic, data storage and computing technologies. Motivated by the prevalence of silicon in present-day electronics, efforts have been made to realize silicon-based spintronics devices, but so far, successful control of the charge carriers' spin in such devices has been limited to low temperatures and to one type of carrier (electrons) only, thus limiting their technological potential. Now a team at the University of Twente has produced a silicon-based three-terminal device in which they demonstrate the successful room-temperature injection, manipulation and detection of spin polarization of both electrons and their positively charged counterparts known as 'holes'.

Date: 2009
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DOI: 10.1038/nature08570

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