‘Memristive’ switches enable ‘stateful’ logic operations via material implication

Julien Borghetti, Gregory S. Snider, Philip J. Kuekes, J. Joshua Yang, Duncan R. Stewart () and R. Stanley Williams ()
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Julien Borghetti: Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, USA
Gregory S. Snider: Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, USA
Philip J. Kuekes: Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, USA
J. Joshua Yang: Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, USA
Duncan R. Stewart: Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, USA
R. Stanley Williams: Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, USA

Nature, 2010, vol. 464, issue 7290, 873-876

Abstract: A good memory for logic The possibility of combining the electrical properties of a memory element and a resistor — in a memristor or memristive device — was proposed by Leon Chua in 1971. It remained in the realms of theory until two years ago, when bipolar voltage-activated switches were identified as physical realizations of the memristor. The resulting revival of interest in memristive devices looks set to continue now that Julien Borghetti and colleagues show how 'memristors' can also perform a fundamental class of logic operations that requires individual devices to act simultaneously as logic and memory elements.

Date: 2010
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DOI: 10.1038/nature08940

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