GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies

Jongseung Yoon, Sungjin Jo, Ik Su Chun, Inhwa Jung, Hoon-Sik Kim, Matthew Meitl (), Etienne Menard, Xiuling Li, James J. Coleman, Ungyu Paik () and John A. Rogers ()
Additional contact information
Jongseung Yoon: Beckman Institute for Advanced Science and Technology, and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
Sungjin Jo: Beckman Institute for Advanced Science and Technology, and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
Ik Su Chun: University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
Inhwa Jung: Beckman Institute for Advanced Science and Technology, and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
Hoon-Sik Kim: Beckman Institute for Advanced Science and Technology, and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
Matthew Meitl: Semprius, Inc., Durham, North Carolina 27713, USA
Etienne Menard: Semprius, Inc., Durham, North Carolina 27713, USA
Xiuling Li: University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
James J. Coleman: University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
Ungyu Paik: Hanyang University
John A. Rogers: Beckman Institute for Advanced Science and Technology, and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA

Nature, 2010, vol. 465, issue 7296, 329-333

Abstract: Flexible GaAs semiconductors Although compound semiconductors like gallium arsenide have a substantial performance advantage over silicon in photovoltaic and optoelectronic applications, these do not outweigh the costly process of growing large, high-quality layers of these materials and transferring them to flexible or transparent substrates for use in devices such as solar cells, night vision cameras and wireless communication systems. But now John Rogers and his team demonstrate a new fabrication approach that may remove this disadvantage. They grow films of GaAs and AlGaAs in thick, multilayered assemblies in a single deposition sequence, then release the individual layers and distribute them over foreign substrates by printing. The technological potential of this strategy to large-area applications is illustrated with the fabrication of GaAs devices such as field-effect transistors on glass and photovoltaic modules on sheets of plastic.

Date: 2010
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DOI: 10.1038/nature09054

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