Coherent control of Rydberg states in silicon

P. T. Greenland (), S. A. Lynch, A. F. G. van der Meer, B. N. Murdin, C. R. Pidgeon, B. Redlich, N. Q. Vinh and G. Aeppli
Additional contact information
P. T. Greenland: University College London
S. A. Lynch: University College London
A. F. G. van der Meer: FOM Institute for Plasma Physics “Rijnhuizen”, PO Box 1207, NL-3430 BE Nieuwegein, The Netherlands
B. N. Murdin: Advanced Technology Institute, University of Surrey
C. R. Pidgeon: Heriot-Watt University, Riccarton, Edinburgh EH14 4AS, UK
B. Redlich: FOM Institute for Plasma Physics “Rijnhuizen”, PO Box 1207, NL-3430 BE Nieuwegein, The Netherlands
N. Q. Vinh: FOM Institute for Plasma Physics “Rijnhuizen”, PO Box 1207, NL-3430 BE Nieuwegein, The Netherlands
G. Aeppli: University College London

Nature, 2010, vol. 465, issue 7301, 1057-1061

Abstract: Atom manipulation in silicon When an atom is excited into a 'Rydberg' state, its electronic wavefunction can extend from less than 0.1 nanometres to several nanometres or more. This process can be used to induce and coherently control interactions between atoms that are sufficiently far apart as to be non-interacting in their normal states. Thornton Greenland and colleagues have exploited this phenomenon to achieve quantum manipulation comparable to that previously performed using laser-cooled trapped atoms, but in the solid state, on phosphorus impurity (dopant) atoms in silicon. The technique could be adapted to control small numbers of independently addressable impurity atoms at known locations, as required for the implementation of quantum logic gates.

Date: 2010
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DOI: 10.1038/nature09112

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