Single-shot readout of an electron spin in silicon

Andrea Morello (), Jarryd J. Pla, Floris A. Zwanenburg, Kok W. Chan, Kuan Y. Tan, Hans Huebl, Mikko Möttönen, Christopher D. Nugroho, Changyi Yang, Jessica A. van Donkelaar, Andrew D. C. Alves, David N. Jamieson, Christopher C. Escott, Lloyd C. L. Hollenberg, Robert G. Clark and Andrew S. Dzurak
Additional contact information
Andrea Morello: Australian Research Council Centre of Excellence for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales 2052, Australia
Jarryd J. Pla: Australian Research Council Centre of Excellence for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales 2052, Australia
Floris A. Zwanenburg: Australian Research Council Centre of Excellence for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales 2052, Australia
Kok W. Chan: Australian Research Council Centre of Excellence for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales 2052, Australia
Kuan Y. Tan: Australian Research Council Centre of Excellence for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales 2052, Australia
Hans Huebl: Australian Research Council Centre of Excellence for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales 2052, Australia
Mikko Möttönen: Australian Research Council Centre of Excellence for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales 2052, Australia
Christopher D. Nugroho: Australian Research Council Centre of Excellence for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales 2052, Australia
Changyi Yang: Australian Research Council Centre of Excellence for Quantum Computer Technology, School of Physics, University of Melbourne, Melbourne, Victoria 3010, Australia
Jessica A. van Donkelaar: Australian Research Council Centre of Excellence for Quantum Computer Technology, School of Physics, University of Melbourne, Melbourne, Victoria 3010, Australia
Andrew D. C. Alves: Australian Research Council Centre of Excellence for Quantum Computer Technology, School of Physics, University of Melbourne, Melbourne, Victoria 3010, Australia
David N. Jamieson: Australian Research Council Centre of Excellence for Quantum Computer Technology, School of Physics, University of Melbourne, Melbourne, Victoria 3010, Australia
Christopher C. Escott: Australian Research Council Centre of Excellence for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales 2052, Australia
Lloyd C. L. Hollenberg: Australian Research Council Centre of Excellence for Quantum Computer Technology, School of Physics, University of Melbourne, Melbourne, Victoria 3010, Australia
Robert G. Clark: Australian Research Council Centre of Excellence for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales 2052, Australia
Andrew S. Dzurak: Australian Research Council Centre of Excellence for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales 2052, Australia

Nature, 2010, vol. 467, issue 7316, 687-691

Abstract: Taking aim at silicon Silicon transistors in microelectronics are shrinking to close to the size at which quantum effects begin to have an impact on device performance. As silicon looks certain to remain the semiconductor material of choice for a while yet, such effects may be turned into an advantage by designing silicon devices that can process quantum information. One approach is to make use of electron spins generated by phosphorus dopant atoms buried in silicon, as they are known to represent well-isolated quantum bits (qubits) with long coherence times. It has not been possible to control single electrons in silicon with the precision for qubits, but now Andrea Morello and colleagues report single-shot, time-resolved readout of electron spins in silicon. This is achieved by placing the phosphorus donor atoms near a charge-sensing device called a single-electron transistor, which is fully compatible with current microelectronic technology. The demonstrated high-fidelity single-shot spin readout opens a path to the development of a new generation of quantum computing and spintronic devices in silicon.

Date: 2010
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DOI: 10.1038/nature09392

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