Detecting excitation and magnetization of individual dopants in a semiconductor

Alexander A. Khajetoorians, Bruno Chilian, Jens Wiebe (), Sergej Schuwalow, Frank Lechermann and Roland Wiesendanger
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Alexander A. Khajetoorians: Institute of Applied Physics, Hamburg University, Jungiusstrasse 11, D-20355 Hamburg, Germany
Bruno Chilian: Institute of Applied Physics, Hamburg University, Jungiusstrasse 11, D-20355 Hamburg, Germany
Jens Wiebe: Institute of Applied Physics, Hamburg University, Jungiusstrasse 11, D-20355 Hamburg, Germany
Sergej Schuwalow: I. Institute for Theoretical Physics, Hamburg University, Jungiusstrasse 9, D-20355 Hamburg, Germany
Frank Lechermann: I. Institute for Theoretical Physics, Hamburg University, Jungiusstrasse 9, D-20355 Hamburg, Germany
Roland Wiesendanger: Institute of Applied Physics, Hamburg University, Jungiusstrasse 11, D-20355 Hamburg, Germany

Nature, 2010, vol. 467, issue 7319, 1084-1087

Abstract: Attractive variations on spintronic qubits Isolated magnetic dopant atoms in a non-magnetic semiconductor host represent a promising system for spintronics applications. The atoms behave rather like minute compass needles, where each 'compass' can align along different directions and thus carry information akin to a bit in conventional information technology. Until now, it has not been possible to study the correlation between the local atomic structure and the dopant's magnetic properties. Khajetoorians et al. have now developed sensitive scanning-probe techniques that can measure spin excitations of individual magnetic dopants within a two-dimensional semiconductor system — in essence, these techniques can read out the orientation of the atomic compass needles. They find that the dopants act as isolated quantum spins that are forced to lie in the direction of the surface plane owing to a substantial magnetic anisotropy effect — a result that is supported by calculations. This work provides a starting point for atomic-scale and single-spin investigations of magnetic dopants embedded in semiconductors.

Date: 2010
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DOI: 10.1038/nature09519

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