Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

Hyunhyub Ko, Kuniharu Takei, Rehan Kapadia, Steven Chuang, Hui Fang, Paul W. Leu, Kartik Ganapathi, Elena Plis, Ha Sul Kim, Szu-Ying Chen, Morten Madsen, Alexandra C. Ford, Yu-Lun Chueh, Sanjay Krishna, Sayeef Salahuddin and Ali Javey ()
Additional contact information
Hyunhyub Ko: Electrical Engineering and Computer Sciences, University of California
Kuniharu Takei: Electrical Engineering and Computer Sciences, University of California
Rehan Kapadia: Electrical Engineering and Computer Sciences, University of California
Steven Chuang: Electrical Engineering and Computer Sciences, University of California
Hui Fang: Electrical Engineering and Computer Sciences, University of California
Paul W. Leu: Electrical Engineering and Computer Sciences, University of California
Kartik Ganapathi: Electrical Engineering and Computer Sciences, University of California
Elena Plis: and Center for High Technology Materials, University of New Mexico
Ha Sul Kim: and Center for High Technology Materials, University of New Mexico
Szu-Ying Chen: Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
Morten Madsen: Electrical Engineering and Computer Sciences, University of California
Alexandra C. Ford: Electrical Engineering and Computer Sciences, University of California
Yu-Lun Chueh: Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
Sanjay Krishna: and Center for High Technology Materials, University of New Mexico
Sayeef Salahuddin: Electrical Engineering and Computer Sciences, University of California
Ali Javey: Electrical Engineering and Computer Sciences, University of California

Nature, 2010, vol. 468, issue 7321, 286-289

Abstract: High-performance nanoscale transistors by transfer printing Compound semiconductor materials such as gallium arsenide and indium arsenide have outstanding electronic properties, but are costly to process and cannot, on their own, compete with silicon when it comes to low-cost fabrication. But as the relentless miniaturization of silicon electronics is reaching its limits, an alternative route of enhanced device performance is becoming more attractive: the integration of compound semiconductors within silicon. Ali Javey and colleagues now present a promising new concept to integrate ultrathin layers of single-crystal indium arsenide on silicon-based substrates with an epitaxial transfer method, a technique borrowed from large-area optoelectronics. With this technique, involving the use of an elastomeric stamp to lift off indium arsenide nanowires and transfer them to a silicon-based substrate, the authors fabricate thin film transistors with excellent device performance.

Date: 2010
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DOI: 10.1038/nature09541

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