Grains and grain boundaries in single-layer graphene atomic patchwork quilts

Pinshane Y. Huang, Carlos S. Ruiz-Vargas, Arend M. van der Zande, William S. Whitney, Mark P. Levendorf, Joshua W. Kevek, Shivank Garg, Jonathan S. Alden, Caleb J. Hustedt, Ye Zhu, Jiwoong Park, Paul L. McEuen and David A. Muller ()
Additional contact information
Pinshane Y. Huang: School of Applied and Engineering Physics, Cornell University
Carlos S. Ruiz-Vargas: School of Applied and Engineering Physics, Cornell University
Arend M. van der Zande: Cornell University, Ithaca, New York 14853, USA
William S. Whitney: Cornell University, Ithaca, New York 14853, USA
Mark P. Levendorf: Cornell University
Joshua W. Kevek: Oregon State University
Shivank Garg: Cornell University
Jonathan S. Alden: School of Applied and Engineering Physics, Cornell University
Caleb J. Hustedt: Brigham Young University
Ye Zhu: School of Applied and Engineering Physics, Cornell University
Jiwoong Park: Cornell University
Paul L. McEuen: Cornell University, Ithaca, New York 14853, USA
David A. Muller: School of Applied and Engineering Physics, Cornell University

Nature, 2011, vol. 469, issue 7330, 389-392

Abstract: Graphene patchwork analysed Single-atom-thick graphene sheets can now be produced at metre scales, bringing large-area applications in electronics and photovoltaics closer. But such large pieces can be expected to be polycrystalline, so it is important to determine the nature and size of the grains involved. Huang et al. use transmission electron microscopy to produce atomic-resolution images at grain boundaries, and map the location, orientation and shape of several hundred grains and boundaries using diffraction-filtered imaging. By correlating grain imaging with scanned probe and transport measurements, they show that the grain boundaries dramatically weaken the mechanical strength of graphene membranes, but do not as dramatically alter their electrical properties.

Date: 2011
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DOI: 10.1038/nature09718

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