Electromagnetically induced transparency and slow light with optomechanics

A. H. Safavi-Naeini, T. P. Mayer Alegre, J. Chan, M. Eichenfield, M. Winger, Q. Lin, J. T. Hill, D. E. Chang and O. Painter ()
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A. H. Safavi-Naeini: Thomas J. Watson Sr Laboratory of Applied Physics, California Institute of Technology
T. P. Mayer Alegre: Thomas J. Watson Sr Laboratory of Applied Physics, California Institute of Technology
J. Chan: Thomas J. Watson Sr Laboratory of Applied Physics, California Institute of Technology
M. Eichenfield: Thomas J. Watson Sr Laboratory of Applied Physics, California Institute of Technology
M. Winger: Thomas J. Watson Sr Laboratory of Applied Physics, California Institute of Technology
Q. Lin: Thomas J. Watson Sr Laboratory of Applied Physics, California Institute of Technology
J. T. Hill: Thomas J. Watson Sr Laboratory of Applied Physics, California Institute of Technology
D. E. Chang: Institute for Quantum Information, California Institute of Technology
O. Painter: Thomas J. Watson Sr Laboratory of Applied Physics, California Institute of Technology

Nature, 2011, vol. 472, issue 7341, 69-73

Abstract: Silicon film as basis for light-slowing device A phenomenon known as electromagnetically induced transparency has been the subject of much research in atomic systems, as it makes it possible to slow down and stop light. Electromagnetically induced transparency and tunable optical delays have now been demonstrated in a nanoscale optomechanical device, fabricated simply by etching holes into a thin film of silicon. This achievement is a significant step towards the goal of fabricating an integrated quantum optomechanical memory. It is also relevant to classical signal-processing applications: at room temperature, the system can be used for optical buffering, amplification and altering of microwave-over-optical signals.

Date: 2011
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DOI: 10.1038/nature09933

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