High-frequency, scaled graphene transistors on diamond-like carbon

Yanqing Wu, Yu-ming Lin (), Ageeth A. Bol, Keith A. Jenkins, Fengnian Xia, Damon B. Farmer, Yu Zhu and Phaedon Avouris ()
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Yanqing Wu: IBM Thomas J. Watson Research Center
Yu-ming Lin: IBM Thomas J. Watson Research Center
Ageeth A. Bol: IBM Thomas J. Watson Research Center
Keith A. Jenkins: IBM Thomas J. Watson Research Center
Fengnian Xia: IBM Thomas J. Watson Research Center
Damon B. Farmer: IBM Thomas J. Watson Research Center
Yu Zhu: IBM Thomas J. Watson Research Center
Phaedon Avouris: IBM Thomas J. Watson Research Center

Nature, 2011, vol. 472, issue 7341, 74-78

Abstract: Diamond standard for graphene transistor Graphene, the one-atom-thick layered form of carbon, shows promise for use in high-frequency microelectronics devices. A team based at the IBM Thomas J. Watson Research Center in New York has now identified a diamond-like form of carbon, which is already well known in the semiconductor industry, as being particularly well suited for use as a substrate for graphene semiconductor devices. Graphene was grown on a copper film substrate by chemical vapour deposition (CVD) and then transferred to a wafer of diamond-like carbon. This was used to produce a high-performance graphene transistor with a cut-off frequency of 155 gigahertz at a gate length of 40 nanometres — the shortest length so far reported. This system not only achieves the highest operation speed so far for CVD-graphene transistors, but also is the smallest well-behaved transistor ever demonstrated on any graphene material.

Date: 2011
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DOI: 10.1038/nature09979

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