Thermal spin current from a ferromagnet to silicon by Seebeck spin tunnelling

Jean-Christophe Le Breton, Sandeep Sharma, Hidekazu Saito, Shinji Yuasa and Ron Jansen ()
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Jean-Christophe Le Breton: Netherlands Foundation for Fundamental Research on Matter (FOM)
Sandeep Sharma: Netherlands Foundation for Fundamental Research on Matter (FOM)
Hidekazu Saito: National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center
Shinji Yuasa: National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center
Ron Jansen: National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center

Nature, 2011, vol. 475, issue 7354, 82-85

Abstract: Turning on the heat in spintronics A spin equivalent of the Seebeck effect is known in various metallic, insulating and semiconductor ferromagnets. In this spin effect, a temperature difference over a ferromagnetic strip leads to a spin voltage, where spin-up electrons accumulate on one side of the strip and spin-down electrons gather on the other. Le Breton et al. now report a rather different phenomenon, in which a thermal gradient over a ferromagnet/oxide/silicon device drives Seebeck electron spin tunnelling through an oxide barrier. This indicates a new mechanism for spin injection into a non-magnetic semiconductor as well as for a functional use of heat in spintronics devices.

Date: 2011
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DOI: 10.1038/nature10224

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