Geometrical enhancement of low-field magnetoresistance in silicon

Caihua Wan, Xiaozhong Zhang (), Xili Gao, Jimin Wang and Xinyu Tan
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Caihua Wan: Laboratory of Advanced Materials, Tsinghua University
Xiaozhong Zhang: Laboratory of Advanced Materials, Tsinghua University
Xili Gao: Laboratory of Advanced Materials, Tsinghua University
Jimin Wang: Laboratory of Advanced Materials, Tsinghua University
Xinyu Tan: Laboratory of Advanced Materials, Tsinghua University

Nature, 2011, vol. 477, issue 7364, 304-307

Abstract: Silicon shapes up for magnetoelectronics Some non-magnetic semiconductors have been found to exhibit potentially useful electrical responses to magnetic fields. Such effects, termed inhomogeneity-induced magnetoresistance, occur when the conductivity of the material is not uniform. Wan et al. now show how this phenomenon can be engineered in silicon using the geometry (shape) of the device, leading to enhanced sensitivities that could prove attractive to the magnetic-field-sensing industry.

Date: 2011
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DOI: 10.1038/nature10375

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