Atom-resolved imaging of ordered defect superstructures at individual grain boundaries

Zhongchang Wang (), Mitsuhiro Saito, Keith P. McKenna, Lin Gu, Susumu Tsukimoto, Alexander L. Shluger and Yuichi Ikuhara
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Zhongchang Wang: World Premier International Research Center, Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Mitsuhiro Saito: World Premier International Research Center, Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Keith P. McKenna: World Premier International Research Center, Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Lin Gu: World Premier International Research Center, Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Susumu Tsukimoto: World Premier International Research Center, Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Alexander L. Shluger: World Premier International Research Center, Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Yuichi Ikuhara: World Premier International Research Center, Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

Nature, 2011, vol. 479, issue 7373, 380-383

Abstract: Crystal boundaries at atomic resolution Using a combination of advanced electron microscopy, spectroscopic techniques and theoretical calculations, Wang et al. obtain atomically resolved images of the defects at the grain boundary regions of magnesium oxide crystals. This level of accuracy is essential for linking the behaviour of grain boundaries with the macroscopic properties of materials. In the relatively simple case of magnesium oxide, the authors find that grain boundaries accommodate ordered defect superstructures that act as electron trapping regions, with consequences for the electronic properties of the material.

Date: 2011
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DOI: 10.1038/nature10593

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