Nanometre-scale electronics with III–V compound semiconductors

Jesús A. del Alamo ()
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Jesús A. del Alamo: Microsystems Technology Laboratories, Massachusetts Institute of Technology

Nature, 2011, vol. 479, issue 7373, 317-323

Abstract: Abstract For 50 years the exponential rise in the power of electronics has been fuelled by an increase in the density of silicon complementary metal–oxide–semiconductor (CMOS) transistors and improvements to their logic performance. But silicon transistor scaling is now reaching its limits, threatening to end the microelectronics revolution. Attention is turning to a family of materials that is well placed to address this problem: group III–V compound semiconductors. The outstanding electron transport properties of these materials might be central to the development of the first nanometre-scale logic transistors.

Date: 2011
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DOI: 10.1038/nature10677

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