A role for graphene in silicon-based semiconductor devices

Kinam Kim (), Jae-Young Choi, Taek Kim, Seong-Ho Cho and Hyun-Jong Chung
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Kinam Kim: Samsung Advanced Institute of Technology (SAIT), Samsung Electronics
Jae-Young Choi: Samsung Advanced Institute of Technology (SAIT), Samsung Electronics
Taek Kim: Samsung Advanced Institute of Technology (SAIT), Samsung Electronics
Seong-Ho Cho: Samsung Advanced Institute of Technology (SAIT), Samsung Electronics
Hyun-Jong Chung: Samsung Advanced Institute of Technology (SAIT), Samsung Electronics

Nature, 2011, vol. 479, issue 7373, 338-344

Abstract: Abstract As silicon-based electronics approach the limit of improvements to performance and capacity through dimensional scaling, attention in the semiconductor field has turned to graphene, a single layer of carbon atoms arranged in a honeycomb lattice. Its high mobility of charge carriers (electrons and holes) could lead to its use in the next generation of high-performance devices. Graphene is unlikely to replace silicon completely, however, because of the poor on/off current ratio resulting from its zero bandgap. But it could be used to improve silicon-based devices, in particular in high-speed electronics and optical modulators.

Date: 2011
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DOI: 10.1038/nature10680

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