Tuning charge transport in solution-sheared organic semiconductors using lattice strain

Gaurav Giri, Eric Verploegen, Stefan C. B. Mannsfeld, Sule Atahan-Evrenk, Do Hwan Kim, Sang Yoon Lee, Hector A. Becerril, Alán Aspuru-Guzik, Michael F. Toney and Zhenan Bao ()
Additional contact information
Gaurav Giri: Stanford University
Eric Verploegen: Stanford University
Stefan C. B. Mannsfeld: Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory
Sule Atahan-Evrenk: Harvard University
Do Hwan Kim: Stanford University
Sang Yoon Lee: Display Device Laboratory, Samsung Advanced Institute of Technology, Mt 14-1, Nongseo-dong, Giheung-gu, Yongin-Si, Kyunggi-Do 449-712, South Korea
Hector A. Becerril: Brigham Young University—Idaho
Alán Aspuru-Guzik: Harvard University
Michael F. Toney: Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory
Zhenan Bao: Stanford University

Nature, 2011, vol. 480, issue 7378, 504-508

Abstract: A solution-processing method known as solution shearing is used to introduce lattice strain to organic semiconductors, thus improving charge carrier mobility.

Date: 2011
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DOI: 10.1038/nature10683

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