Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

Yasuyuki Kobayashi (), Kazuhide Kumakura, Tetsuya Akasaka and Toshiki Makimoto
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Yasuyuki Kobayashi: NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
Kazuhide Kumakura: NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
Tetsuya Akasaka: NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
Toshiki Makimoto: NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

Nature, 2012, vol. 484, issue 7393, 223-227

Abstract: Introducing an extremely thin layer of boron nitride between a sapphire substrate and the gallium nitride semiconductor grown on it is shown to facilitate the transfer of the resulting nitride structures to more flexible and affordable substrates.

Date: 2012
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DOI: 10.1038/nature10970

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