Collective bulk carrier delocalization driven by electrostatic surface charge accumulation

M. Nakano (), K. Shibuya, D. Okuyama, T. Hatano, S. Ono, M. Kawasaki, Y. Iwasa () and Y. Tokura
Additional contact information
M. Nakano: Correlated Electron Research Group (CERG) and Cross-correlated Materials Research Group (CMRG), RIKEN Advanced Science Institute
K. Shibuya: Correlated Electron Research Group (CERG) and Cross-correlated Materials Research Group (CMRG), RIKEN Advanced Science Institute
D. Okuyama: Correlated Electron Research Group (CERG) and Cross-correlated Materials Research Group (CMRG), RIKEN Advanced Science Institute
T. Hatano: Correlated Electron Research Group (CERG) and Cross-correlated Materials Research Group (CMRG), RIKEN Advanced Science Institute
S. Ono: Correlated Electron Research Group (CERG) and Cross-correlated Materials Research Group (CMRG), RIKEN Advanced Science Institute
M. Kawasaki: Correlated Electron Research Group (CERG) and Cross-correlated Materials Research Group (CMRG), RIKEN Advanced Science Institute
Y. Iwasa: Correlated Electron Research Group (CERG) and Cross-correlated Materials Research Group (CMRG), RIKEN Advanced Science Institute
Y. Tokura: Correlated Electron Research Group (CERG) and Cross-correlated Materials Research Group (CMRG), RIKEN Advanced Science Institute

Nature, 2012, vol. 487, issue 7408, 459-462

Abstract: A conceptually new type of transistor, based on a strongly correlated material, allows external control of a macroscopic electronic phase transition, and gives rise to a non-volatile memory effect.

Date: 2012
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DOI: 10.1038/nature11296

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