Graphene and boron nitride lateral heterostructures for atomically thin circuitry

Mark P. Levendorf, Cheol-Joo Kim, Lola Brown, Pinshane Y. Huang, Robin W. Havener, David A. Muller and Jiwoong Park ()
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Mark P. Levendorf: Cornell University
Cheol-Joo Kim: Cornell University
Lola Brown: Cornell University
Pinshane Y. Huang: School of Applied and Engineering Physics, Cornell University
Robin W. Havener: School of Applied and Engineering Physics, Cornell University
David A. Muller: School of Applied and Engineering Physics, Cornell University
Jiwoong Park: Cornell University

Nature, 2012, vol. 488, issue 7413, 627-632

Abstract: This versatile and scalable ‘patterned regrowth’ fabrication process produces one-atom-thick sheets containing lateral junctions between electrically conductive graphene and insulating hexagonal boron nitride, paving the way for flexible, transparent electronic device films.

Date: 2012
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DOI: 10.1038/nature11408

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