Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films

Yong-Hoon Kim, Jae-Sang Heo, Tae-Hyeong Kim, Sungjun Park, Myung-Han Yoon, Jiwan Kim, Min Suk Oh, Gi-Ra Yi, Yong-Young Noh and Sung Kyu Park ()
Additional contact information
Yong-Hoon Kim: Flexible Display Research Center, Korea Electronics Technology Institute, Seongnam 463-816, Korea
Jae-Sang Heo: School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756, Korea
Tae-Hyeong Kim: Flexible Display Research Center, Korea Electronics Technology Institute, Seongnam 463-816, Korea
Sungjun Park: School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea
Myung-Han Yoon: School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea
Jiwan Kim: Flexible Display Research Center, Korea Electronics Technology Institute, Seongnam 463-816, Korea
Min Suk Oh: Flexible Display Research Center, Korea Electronics Technology Institute, Seongnam 463-816, Korea
Gi-Ra Yi: Sungkyunkwan University, Suwon 440-746, Korea
Yong-Young Noh: Hanbat National University, Daejeon 305-719, Korea
Sung Kyu Park: School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756, Korea

Nature, 2012, vol. 489, issue 7414, 128-132

Abstract: A method for annealing metal-oxide semiconductor films with deep-ultraviolet light yields thin-film transistors with performance comparable to that of thermally annealed devices, and widens the range of substrates on which such devices can be fabricated.

Date: 2012
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DOI: 10.1038/nature11434

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