A micrometre-scale Raman silicon laser with a microwatt threshold

Yasushi Takahashi (), Yoshitaka Inui, Masahiro Chihara, Takashi Asano, Ryo Terawaki and Susumu Noda ()
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Yasushi Takahashi: Nanoscience and Nanotechnology Research Center, Research Organization for the 21st Century, Osaka Prefecture University, Sakai, Osaka 599-8570, Japan
Yoshitaka Inui: Kyoto University, Kyoto 615-8510, Japan
Masahiro Chihara: Nanoscience and Nanotechnology Research Center, Research Organization for the 21st Century, Osaka Prefecture University, Sakai, Osaka 599-8570, Japan
Takashi Asano: Kyoto University, Kyoto 615-8510, Japan
Ryo Terawaki: Nanoscience and Nanotechnology Research Center, Research Organization for the 21st Century, Osaka Prefecture University, Sakai, Osaka 599-8570, Japan
Susumu Noda: Kyoto University, Kyoto 615-8510, Japan

Nature, 2013, vol. 498, issue 7455, 470-474

Abstract: A continuous-wave Raman silicon laser with a photonic-crystal nanocavity less than ten micrometres in size and an unprecedentedly low lasing threshold of one microwatt is demonstrated, showing that the integration of all-silicon devices into photonic circuits may be possible.

Date: 2013
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DOI: 10.1038/nature12237

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