Low-voltage magnetoresistance in silicon

Jun Luo (), Peisen Li, Sen Zhang, Hongyu Sun, Hongping Yang and Yonggang Zhao
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Jun Luo: Beijing National Center for Electron Microscopy, Laboratory of Advanced Materials, Tsinghua University
Peisen Li: Tsinghua University
Sen Zhang: Tsinghua University
Hongyu Sun: Beijing National Center for Electron Microscopy, Laboratory of Advanced Materials, Tsinghua University
Hongping Yang: Beijing National Center for Electron Microscopy, Laboratory of Advanced Materials, Tsinghua University
Yonggang Zhao: Tsinghua University

Nature, 2013, vol. 501, issue 7468, E1-E1

Abstract: Abstract Arising from C. H. Wan, X. Z. Zhang, X. L. Gao, J. M. Wang & X. Y. Tan Nature 477, 304–307 (2011).10.1038/nature10375 Magnetoresistance exhibited by non-magnetic semiconductors has attracted much attention1,2,3,4,5,6,7,8,9,10,11,12,13. In particular, Wan et al. reported room-temperature magnetoresistance in silicon to reach 10% at 0.07 T and 150,000% at 7 T—“an intrinsically spatial effect”12. Their supply voltage was approximately 10 V (ref. 12), which is low and approaches the industrial requirement14. However, we have found their large magnetoresistance values to be experimental artefacts caused by their method of measurement. The true room-temperature magnetoresistance of the devices described in ref. 12 is low with a magnetic field of up to 7 T and a supply voltage of around 10 V and hence these devices cannot offer large magnetoresistance with low supply voltage to industry. There is a Reply to this Brief Communication Arising by Zhang, X. Z., Wan, C. H., Gao, X. L., Wang, J. M. & Tan, X. Y. Nature 501, http://dx.doi.org/10.1038/nature12590 (2013).

Date: 2013
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DOI: 10.1038/nature12589

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