Large, non-saturating magnetoresistance in WTe2

Mazhar N. Ali (), Jun Xiong, Steven Flynn, Jing Tao, Quinn D. Gibson, Leslie M. Schoop, Tian Liang, Neel Haldolaarachchige, Max Hirschberger, N. P. Ong and R. J. Cava
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Mazhar N. Ali: Princeton University, Princeton, New Jersey 08544, USA
Jun Xiong: Princeton University, Princeton, New Jersey 08544, USA
Steven Flynn: Princeton University, Princeton, New Jersey 08544, USA
Jing Tao: Brookhaven National Laboratory, Upton, New York 11973, USA
Quinn D. Gibson: Princeton University, Princeton, New Jersey 08544, USA
Leslie M. Schoop: Princeton University, Princeton, New Jersey 08544, USA
Tian Liang: Princeton University, Princeton, New Jersey 08544, USA
Neel Haldolaarachchige: Princeton University, Princeton, New Jersey 08544, USA
Max Hirschberger: Princeton University, Princeton, New Jersey 08544, USA
N. P. Ong: Princeton University, Princeton, New Jersey 08544, USA
R. J. Cava: Princeton University, Princeton, New Jersey 08544, USA

Nature, 2014, vol. 514, issue 7521, 205-208

Abstract: The magnetoresistance effect in WTe2, a layered semimetal, is extremely large: the electrical resistance can be changed by more than 13 million per cent at very high magnetic fields and low temperatures.

Date: 2014
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DOI: 10.1038/nature13763

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