High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity

Kibum Kang, Saien Xie, Lujie Huang, Yimo Han, Pinshane Y. Huang, Kin Fai Mak, Cheol-Joo Kim, David Muller and Jiwoong Park ()
Additional contact information
Kibum Kang: Cornell University
Saien Xie: School of Applied and Engineering Physics, Cornell University
Lujie Huang: Cornell University
Yimo Han: School of Applied and Engineering Physics, Cornell University
Pinshane Y. Huang: School of Applied and Engineering Physics, Cornell University
Kin Fai Mak: Kavli Institute at Cornell for Nanoscale Science
Cheol-Joo Kim: Cornell University
David Muller: School of Applied and Engineering Physics, Cornell University
Jiwoong Park: Cornell University

Nature, 2015, vol. 520, issue 7549, 656-660

Abstract: A new chemical vapour deposition method enables transition-metal dichalcogenide (TMD) monolayers to be grown directly on insulating silicon dioxide wafers, demonstrating the possibility of wafer-scale batch fabrication of high-performance devices with TMD monolayers.

Date: 2015
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DOI: 10.1038/nature14417

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