A subthermionic tunnel field-effect transistor with an atomically thin channel

Deblina Sarkar, Xuejun Xie, Wei Liu, Wei Cao, Jiahao Kang, Yongji Gong, Stephan Kraemer, Pulickel M. Ajayan and Kaustav Banerjee ()
Additional contact information
Deblina Sarkar: University of California
Xuejun Xie: University of California
Wei Liu: University of California
Wei Cao: University of California
Jiahao Kang: University of California
Yongji Gong: Rice University
Stephan Kraemer: University of California
Pulickel M. Ajayan: Rice University
Kaustav Banerjee: University of California

Nature, 2015, vol. 526, issue 7571, 91-95

Abstract: A new type of device, the band-to-band tunnel transistor, which has atomically thin molybdenum disulfide as the active channel, operates in a fundamentally different way from a conventional silicon (MOSFET) transistor; it has turn-on characteristics and low-power operation that are better than those of state-of-the-art MOSFETs or any tunnelling transistor reported so far.

Date: 2015
References: Add references at CitEc
Citations: View citations in EconPapers (1)

Downloads: (external link)
https://www.nature.com/articles/nature15387 Abstract (text/html)
Access to the full text of the articles in this series is restricted.

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:nature:v:526:y:2015:i:7571:d:10.1038_nature15387

Ordering information: This journal article can be ordered from
https://www.nature.com/

DOI: 10.1038/nature15387

Access Statistics for this article

Nature is currently edited by Magdalena Skipper

More articles in Nature from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().