Interface dynamics and crystal phase switching in GaAs nanowires

Daniel Jacobsson (), Federico Panciera, Jerry Tersoff, Mark C. Reuter, Sebastian Lehmann, Stephan Hofmann, Kimberly A. Dick and Frances M. Ross ()
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Daniel Jacobsson: Solid State Physics and NanoLund, Lund University
Federico Panciera: University of Cambridge
Jerry Tersoff: IBM T. J. Watson Research Center, 1101 Kitchawan Road
Mark C. Reuter: IBM T. J. Watson Research Center, 1101 Kitchawan Road
Sebastian Lehmann: Solid State Physics and NanoLund, Lund University
Stephan Hofmann: University of Cambridge
Kimberly A. Dick: Solid State Physics and NanoLund, Lund University
Frances M. Ross: IBM T. J. Watson Research Center, 1101 Kitchawan Road

Nature, 2016, vol. 531, issue 7594, 317-322

Abstract: Abstract Controlled formation of non-equilibrium crystal structures is one of the most important challenges in crystal growth. Catalytically grown nanowires are ideal systems for studying the fundamental physics of phase selection, and could lead to new electronic applications based on the engineering of crystal phases. Here we image gallium arsenide (GaAs) nanowires during growth as they switch between phases as a result of varying growth conditions. We find clear differences between the growth dynamics of the phases, including differences in interface morphology, step flow and catalyst geometry. We explain these differences, and the phase selection, using a model that relates the catalyst volume, the contact angle at the trijunction (the point at which solid, liquid and vapour meet) and the nucleation site of each new layer of GaAs. This model allows us to predict the conditions under which each phase should be observed, and use these predictions to design GaAs heterostructures. These results could apply to phase selection in other nanowire systems.

Date: 2016
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DOI: 10.1038/nature17148

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