Enhanced flexoelectric-like response in oxide semiconductors

Jackeline Narvaez, Fabian Vasquez-Sancho and Gustau Catalan ()
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Jackeline Narvaez: Institut Catala de Nanociencia i Nanotecnologia (ICN2), CSIC and The Barcelona Institute of Nanoscience and Technology (BIST), Campus UAB
Fabian Vasquez-Sancho: Institut Catala de Nanociencia i Nanotecnologia (ICN2), CSIC and The Barcelona Institute of Nanoscience and Technology (BIST), Campus UAB
Gustau Catalan: Institut Catala de Nanociencia i Nanotecnologia (ICN2), CSIC and The Barcelona Institute of Nanoscience and Technology (BIST), Campus UAB

Nature, 2016, vol. 538, issue 7624, 219-221

Abstract: Semiconducting single crystals of doped barium titanate and titanium dioxide exhibit a flexoelectric-like response upon bending that is much larger than in their undoped, insulating counterparts, reaching unprecedentedly large effective flexoelectric coefficients.

Date: 2016
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DOI: 10.1038/nature19761

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