Photovoltage field-effect transistors

Valerio Adinolfi and Edward H. Sargent ()
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Valerio Adinolfi: University of Toronto
Edward H. Sargent: University of Toronto

Nature, 2017, vol. 542, issue 7641, 324-327

Abstract: A photovoltage field-effect transistor is demonstrated that is very sensitive to infrared light and has high gain.

Date: 2017
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DOI: 10.1038/nature21050

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