Correction: Corrigendum: Photovoltage field-effect transistors

Valerio Adinolfi and Edward H. Sargent

Nature, 2017, vol. 545, issue 7653, 252-252

Abstract: Nature 542, 324–327 (2017); doi:10.1038/nature21050 It has been brought to our attention that there exist other examples, besides those of references 18 and 19 cited in this Letter, of field effect transistors with light-activated gates1,2. These additional works use InAs quantum dots on top of GaAs:AlGaAs heterostructures.

Date: 2017
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DOI: 10.1038/nature22347

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