Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2

Yujun Deng, Yijun Yu, Yichen Song, Jingzhao Zhang, Nai Zhou Wang, Zeyuan Sun, Yangfan Yi, Yi Zheng Wu, Shiwei Wu, Junyi Zhu, Jing Wang, Xian Hui Chen and Yuanbo Zhang ()
Additional contact information
Yujun Deng: Fudan University
Yijun Yu: Fudan University
Yichen Song: Fudan University
Jingzhao Zhang: The Chinese University of Hong Kong
Nai Zhou Wang: Nanjing University
Zeyuan Sun: Fudan University
Yangfan Yi: Fudan University
Yi Zheng Wu: Fudan University
Shiwei Wu: Fudan University
Junyi Zhu: The Chinese University of Hong Kong
Jing Wang: Fudan University
Xian Hui Chen: Nanjing University
Yuanbo Zhang: Fudan University

Nature, 2018, vol. 563, issue 7729, 94-99

Abstract: Abstract Materials research has driven the development of modern nano-electronic devices. In particular, research in magnetic thin films has revolutionized the development of spintronic devices1,2 because identifying new magnetic materials is key to better device performance and design. Van der Waals crystals retain their chemical stability and structural integrity down to the monolayer and, being atomically thin, are readily tuned by various kinds of gate modulation3,4. Recent experiments have demonstrated that it is possible to obtain two-dimensional ferromagnetic order in insulating Cr2Ge2Te6 (ref. 5) and CrI3 (ref. 6) at low temperatures. Here we develop a device fabrication technique and isolate monolayers from the layered metallic magnet Fe3GeTe2 to study magnetotransport. We find that the itinerant ferromagnetism persists in Fe3GeTe2 down to the monolayer with an out-of-plane magnetocrystalline anisotropy. The ferromagnetic transition temperature, Tc, is suppressed relative to the bulk Tc of 205 kelvin in pristine Fe3GeTe2 thin flakes. An ionic gate, however, raises Tc to room temperature, much higher than the bulk Tc. The gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2 opens up opportunities for potential voltage-controlled magnetoelectronics7–11 based on atomically thin van der Waals crystals.

Keywords: Fegeta (FGT); Itinerant Ferromagnetism; Ga Tion; Thin Flakes; Anomalous Hall Effect (search for similar items in EconPapers)
Date: 2018
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Citations: View citations in EconPapers (4)

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DOI: 10.1038/s41586-018-0626-9

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