Graphene and two-dimensional materials for silicon technology

Deji Akinwande (), Cedric Huyghebaert, Ching-Hua Wang, Martha I. Serna, Stijn Goossens, Lain-Jong Li, H.-S. Philip Wong and Frank H. L. Koppens
Additional contact information
Deji Akinwande: The University of Texas at Austin
Cedric Huyghebaert: IMEC
Ching-Hua Wang: Stanford University
Martha I. Serna: The University of Texas at Austin
Stijn Goossens: The Barcelona Institute of Science and Technology, Castelldefels (Barcelona)
Lain-Jong Li: Corporate Research, Taiwan Semiconductor Manufacturing Company (TSMC)
H.-S. Philip Wong: Stanford University
Frank H. L. Koppens: The Barcelona Institute of Science and Technology, Castelldefels (Barcelona)

Nature, 2019, vol. 573, issue 7775, 507-518

Abstract: Abstract The development of silicon semiconductor technology has produced breakthroughs in electronics—from the microprocessor in the late 1960s to early 1970s, to automation, computers and smartphones—by downscaling the physical size of devices and wires to the nanometre regime. Now, graphene and related two-dimensional (2D) materials offer prospects of unprecedented advances in device performance at the atomic limit, and a synergistic combination of 2D materials with silicon chips promises a heterogeneous platform to deliver massively enhanced potential based on silicon technology. Integration is achieved via three-dimensional monolithic construction of multifunctional high-rise 2D silicon chips, enabling enhanced performance by exploiting the vertical direction and the functional diversification of the silicon platform for applications in opto-electronics and sensing. Here we review the opportunities, progress and challenges of integrating atomically thin materials with silicon-based nanosystems, and also consider the prospects for computational and non-computational applications.

Date: 2019
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DOI: 10.1038/s41586-019-1573-9

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