Strain engineering and epitaxial stabilization of halide perovskites

Yimu Chen, Yusheng Lei, Yuheng Li, Yugang Yu, Jinze Cai, Ming-Hui Chiu, Rahul Rao, Yue Gu, Chunfeng Wang, Woojin Choi, Hongjie Hu, Chonghe Wang, Yang Li, Jiawei Song, Jingxin Zhang, Baiyan Qi, Muyang Lin, Zhuorui Zhang, Ahmad E. Islam, Benji Maruyama, Shadi Dayeh, Lain-Jong Li, Kesong Yang, Yu-Hwa Lo and Sheng Xu ()
Additional contact information
Yimu Chen: University of California San Diego
Yusheng Lei: University of California San Diego
Yuheng Li: University of California San Diego
Yugang Yu: University of California San Diego
Jinze Cai: University of California San Diego
Ming-Hui Chiu: King Abdullah University of Science and Technology
Rahul Rao: Air Force Research Laboratory, Wright Patterson Air Force Base
Yue Gu: University of California San Diego
Chunfeng Wang: University of California San Diego
Woojin Choi: University of California San Diego
Hongjie Hu: University of California San Diego
Chonghe Wang: University of California San Diego
Yang Li: University of California San Diego
Jiawei Song: University of California San Diego
Jingxin Zhang: University of California San Diego
Baiyan Qi: University of California San Diego
Muyang Lin: University of California San Diego
Zhuorui Zhang: University of California San Diego
Ahmad E. Islam: Air Force Research Laboratory, Wright Patterson Air Force Base
Benji Maruyama: Air Force Research Laboratory, Wright Patterson Air Force Base
Shadi Dayeh: University of California San Diego
Lain-Jong Li: King Abdullah University of Science and Technology
Kesong Yang: University of California San Diego
Yu-Hwa Lo: University of California San Diego
Sheng Xu: University of California San Diego

Nature, 2020, vol. 577, issue 7789, 209-215

Abstract: Abstract Strain engineering is a powerful tool with which to enhance semiconductor device performance1,2. Halide perovskites have shown great promise in device applications owing to their remarkable electronic and optoelectronic properties3–5. Although applying strain to halide perovskites has been frequently attempted, including using hydrostatic pressurization6–8, electrostriction9, annealing10–12, van der Waals force13, thermal expansion mismatch14, and heat-induced substrate phase transition15, the controllable and device-compatible strain engineering of halide perovskites by chemical epitaxy remains a challenge, owing to the absence of suitable lattice-mismatched epitaxial substrates. Here we report the strained epitaxial growth of halide perovskite single-crystal thin films on lattice-mismatched halide perovskite substrates. We investigated strain engineering of α-formamidinium lead iodide (α-FAPbI3) using both experimental techniques and theoretical calculations. By tailoring the substrate composition—and therefore its lattice parameter—a compressive strain as high as 2.4 per cent is applied to the epitaxial α-FAPbI3 thin film. We demonstrate that this strain effectively changes the crystal structure, reduces the bandgap and increases the hole mobility of α-FAPbI3. Strained epitaxy is also shown to have a substantial stabilization effect on the α-FAPbI3 phase owing to the synergistic effects of epitaxial stabilization and strain neutralization. As an example, strain engineering is applied to enhance the performance of an α-FAPbI3-based photodetector.

Date: 2020
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DOI: 10.1038/s41586-019-1868-x

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