Current-driven magnetic domain-wall logic

Zhaochu Luo (), Aleš Hrabec, Trong Phuong Dao, Giacomo Sala, Simone Finizio, Junxiao Feng, Sina Mayr, Jörg Raabe, Pietro Gambardella () and Laura J. Heyderman ()
Additional contact information
Zhaochu Luo: ETH Zurich
Aleš Hrabec: ETH Zurich
Trong Phuong Dao: ETH Zurich
Giacomo Sala: ETH Zurich
Simone Finizio: Paul Scherrer Institut
Junxiao Feng: ETH Zurich
Sina Mayr: ETH Zurich
Jörg Raabe: Paul Scherrer Institut
Pietro Gambardella: ETH Zurich
Laura J. Heyderman: ETH Zurich

Nature, 2020, vol. 579, issue 7798, 214-218

Abstract: Abstract Spin-based logic architectures provide nonvolatile data retention, near-zero leakage, and scalability, extending the technology roadmap beyond complementary metal–oxide–semiconductor logic1–13. Architectures based on magnetic domain walls take advantage of the fast motion, high density, non-volatility and flexible design of domain walls to process and store information1,3,14–16. Such schemes, however, rely on domain-wall manipulation and clocking using an external magnetic field, which limits their implementation in dense, large-scale chips. Here we demonstrate a method for performing all-electric logic operations and cascading using domain-wall racetracks. We exploit the chiral coupling between neighbouring magnetic domains induced by the interfacial Dzyaloshinskii–Moriya interaction17–20, which promotes non-collinear spin alignment, to realize a domain-wall inverter, the essential basic building block in all implementations of Boolean logic. We then fabricate reconfigurable NAND and NOR logic gates, and perform operations with current-induced domain-wall motion. Finally, we cascade several NAND gates to build XOR and full adder gates, demonstrating electrical control of magnetic data and device interconnection in logic circuits. Our work provides a viable platform for scalable all-electric magnetic logic, paving the way for memory-in-logic applications.

Date: 2020
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DOI: 10.1038/s41586-020-2061-y

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