General synthesis of two-dimensional van der Waals heterostructure arrays

Jia Li, Xiangdong Yang, Yang Liu, Bolong Huang, Ruixia Wu, Zhengwei Zhang, Bei Zhao, Huifang Ma, Weiqi Dang, Zheng Wei, Kai Wang, Zhaoyang Lin, Xingxu Yan, Mingzi Sun, Bo Li, Xiaoqing Pan, Jun Luo, Guangyu Zhang, Yuan Liu, Yu Huang, Xidong Duan () and Xiangfeng Duan ()
Additional contact information
Jia Li: Hunan University
Xiangdong Yang: Hunan University
Yang Liu: University of California, Los Angeles
Bolong Huang: The Hong Kong Polytechnic University
Ruixia Wu: Hunan University
Zhengwei Zhang: Hunan University
Bei Zhao: Hunan University
Huifang Ma: Hunan University
Weiqi Dang: Hunan University
Zheng Wei: Beijing National Laboratory for Condensed Matter Physics Institute of Physics, Chinese Academy of Sciences
Kai Wang: Tianjin University of Technology
Zhaoyang Lin: University of California, Los Angeles
Xingxu Yan: University of California, Irvine
Mingzi Sun: The Hong Kong Polytechnic University
Bo Li: Hunan University
Xiaoqing Pan: University of California, Irvine
Jun Luo: Tianjin University of Technology
Guangyu Zhang: Beijing National Laboratory for Condensed Matter Physics Institute of Physics, Chinese Academy of Sciences
Yuan Liu: Hunan University
Yu Huang: University of California, Los Angeles
Xidong Duan: Hunan University
Xiangfeng Duan: University of California, Los Angeles

Nature, 2020, vol. 579, issue 7799, 368-374

Abstract: Abstract Two-dimensional van der Waals heterostructures (vdWHs) have attracted considerable interest1–4. However, most vdWHs reported so far are created by an arduous micromechanical exfoliation and manual restacking process5, which—although versatile for proof-of-concept demonstrations6–16 and fundamental studies17–30—is clearly not scalable for practical technologies. Here we report a general synthetic strategy for two-dimensional vdWH arrays between metallic transition-metal dichalcogenides (m-TMDs) and semiconducting TMDs (s-TMDs). By selectively patterning nucleation sites on monolayer or bilayer s-TMDs, we precisely control the nucleation and growth of diverse m-TMDs with designable periodic arrangements and tunable lateral dimensions at the predesignated spatial locations, producing a series of vdWH arrays, including VSe2/WSe2, NiTe2/WSe2, CoTe2/WSe2, NbTe2/WSe2, VS2/WSe2, VSe2/MoS2 and VSe2/WS2. Systematic scanning transmission electron microscopy studies reveal nearly ideal vdW interfaces with widely tunable moiré superlattices. With the atomically clean vdW interface, we further show that the m-TMDs function as highly reliable synthetic vdW contacts for the underlying WSe2 with excellent device performance and yield, delivering a high ON-current density of up to 900 microamperes per micrometre in bilayer WSe2 transistors. This general synthesis of diverse two-dimensional vdWH arrays provides a versatile material platform for exploring exotic physics and promises a scalable pathway to high-performance devices.

Date: 2020
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DOI: 10.1038/s41586-020-2098-y

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