Ultralow-dielectric-constant amorphous boron nitride

Seokmo Hong, Chang-Seok Lee, Min-Hyun Lee, Yeongdong Lee, Kyung Yeol Ma, Gwangwoo Kim, Seong In Yoon, Kyuwook Ihm, Ki-Jeong Kim, Tae Joo Shin, Sang Won Kim, Eun-chae Jeon, Hansol Jeon, Ju-Young Kim, Hyung-Ik Lee, Zonghoon Lee, Aleandro Antidormi, Stephan Roche, Manish Chhowalla (), Hyeon-Jin Shin () and Hyeon Suk Shin ()
Additional contact information
Seokmo Hong: Ulsan National Institute of Science and Technology (UNIST)
Chang-Seok Lee: Inorganic Material Lab., Samsung Advanced Institute of Technology (SAIT)
Min-Hyun Lee: Inorganic Material Lab., Samsung Advanced Institute of Technology (SAIT)
Yeongdong Lee: Ulsan National Institute of Science and Technology (UNIST)
Kyung Yeol Ma: Institute for Basic Science (IBS)
Gwangwoo Kim: Ulsan National Institute of Science and Technology (UNIST)
Seong In Yoon: Institute for Basic Science (IBS)
Kyuwook Ihm: Pohang Accelerator Laboratory
Ki-Jeong Kim: Pohang Accelerator Laboratory
Tae Joo Shin: Ulsan National Institute of Science and Technology (UNIST)
Sang Won Kim: Inorganic Material Lab., Samsung Advanced Institute of Technology (SAIT)
Eun-chae Jeon: University of Ulsan
Hansol Jeon: Ulsan National Institute of Science and Technology (UNIST)
Ju-Young Kim: Ulsan National Institute of Science and Technology (UNIST)
Hyung-Ik Lee: Samsung Advanced Institute of Technology (SAIT)
Zonghoon Lee: Ulsan National Institute of Science and Technology (UNIST)
Aleandro Antidormi: Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST
Stephan Roche: Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST
Manish Chhowalla: University of Cambridge
Hyeon-Jin Shin: Inorganic Material Lab., Samsung Advanced Institute of Technology (SAIT)
Hyeon Suk Shin: Ulsan National Institute of Science and Technology (UNIST)

Nature, 2020, vol. 582, issue 7813, 511-514

Abstract: Abstract Decrease in processing speed due to increased resistance and capacitance delay is a major obstacle for the down-scaling of electronics1–3. Minimizing the dimensions of interconnects (metal wires that connect different electronic components on a chip) is crucial for the miniaturization of devices. Interconnects are isolated from each other by non-conducting (dielectric) layers. So far, research has mostly focused on decreasing the resistance of scaled interconnects because integration of dielectrics using low-temperature deposition processes compatible with complementary metal–oxide–semiconductors is technically challenging. Interconnect isolation materials must have low relative dielectric constants (κ values), serve as diffusion barriers against the migration of metal into semiconductors, and be thermally, chemically and mechanically stable. Specifically, the International Roadmap for Devices and Systems recommends4 the development of dielectrics with κ values of less than 2 by 2028. Existing low-κ materials (such as silicon oxide derivatives, organic compounds and aerogels) have κ values greater than 2 and poor thermo-mechanical properties5. Here we report three-nanometre-thick amorphous boron nitride films with ultralow κ values of 1.78 and 1.16 (close to that of air, κ = 1) at operation frequencies of 100 kilohertz and 1 megahertz, respectively. The films are mechanically and electrically robust, with a breakdown strength of 7.3 megavolts per centimetre, which exceeds requirements. Cross-sectional imaging reveals that amorphous boron nitride prevents the diffusion of cobalt atoms into silicon under very harsh conditions, in contrast to reference barriers. Our results demonstrate that amorphous boron nitride has excellent low-κ dielectric characteristics for high-performance electronics.

Date: 2020
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DOI: 10.1038/s41586-020-2375-9

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